FDS6910 - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDS6910
Manufacturer	Fairchild Semiconductor
File Size	137.41 KB
Description	MOSFET
Datasheet	FDS6910 Datasheet
Additional preview pages of the FDS6910 datasheet.

Product details

Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

7.5 A, 30 V. RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V.
Fast switching speed.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 6 Q1 7 Q2 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Conti.

📁 Similar Datasheet

FDS6910 - Dual N-Channel MOSFET (ON Semiconductor)
FDS6912A - Dual N-Channel MOSFET (ON Semiconductor)
FDS6900AS - Dual N-Channel MOSFET (ON Semiconductor)
FDS6900AS-G - Dual N-Channel MOSFET (ON Semiconductor)
FDS6930A - Dual N-Channel MOSFET (ON Semiconductor)
FDS6930B - Dual N-Channel MOSFET (Kexin)
FDS6961A - Dual N-Channel MOSFET (ON Semiconductor)
FDS6975 - Dual P-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDS6911 - MOSFET
FDS6912 - Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6912A - Dual N-Channel MOSFET
FDS6900AS - Dual N-Ch PowerTrench SyncFET
FDS6900S - Dual N-Ch PowerTrench SyncFet
FDS6930A - Dual N-Channel MOSFET

Published: Jan 11, 2017 |