Datasheet4U Logo Datasheet4U.com

FDS6910 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS6910 September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET.

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Key Features

  • 7.5 A, 30 V. RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 6 Q1 7 Q2 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Conti.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDS6910 Dual N-Channel MOSFET ON Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDS6911 MOSFET
FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6912A Dual N-Channel MOSFET
FDS6900AS Dual N-Ch PowerTrench SyncFET
FDS6900S Dual N-Ch PowerTrench SyncFet
FDS6930A Dual N-Channel MOSFET
FDS6930B Dual N-Channel MOSFET
FDS6961A Dual N-Channel MOSFET
FDS6975 Dual P-Channel MOSFET
FDS6982 Dual N-Channel/ Notebook Power Supply MOSFET

FDS6910 Distributor