Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
- rDS(on) = 13 mΩ @ VGS = 10 V rDS(on) = 17 mΩ @ VGS = 4.5 V.
- Fast switching speed.
- Low gate charge.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability
DD2 DD2 DD1 DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
S1 1 G1 2 S2 3 G2 4
Q1 8 D1 7 D1
Q2 6 D2 5 D2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Vo.
FDS6911 Datasheet
