FDS6912A Datasheet | Fairchild Semiconductor

June 1998 FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features 6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V RDS(ON) = 0.035 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 9 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability. These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are...