Description
These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- RDS(ON) = 0.028 Ω @ VGS = 10 V.
- 6 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V.
- Optimized for use in switching DC/DC converters with PWM controllers.
- Very fast switching.
- Low gate charge
D1 D1 D2 D2 S1 G1
5 6 7
Q1
4 3 2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ±20
(Note 1a)
Units
V.