FDS6912A
Overview
These N-Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- 6.0 A, 30 V RDS(ON) = 28 mW @ VGS = 10 V RDS(ON) = 35 mW @ VGS = 4.5 V
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This Device is Pb-Free and Halogen Free
