FDS6910 - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDS6910
Manufacturer	ON Semiconductor
File Size	172.90 KB
Description	Dual N-Channel MOSFET
Datasheet	FDS6910 Datasheet
Additional preview pages of the FDS6910 datasheet.

Product details

Description

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

7.5 A, 30 V. RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V.
Fast switching speed.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 6 Q1 7 Q2 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
C.

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Published: Mar 10, 2020 |