Datasheet Summary
MOSFET, N-Channel, POWERTRENCH)
40 V, 18.6 A, 4.5 mW
General Description The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance.
Features
- Max rDS(on) = 4.5 mW at VGS = 10 V, ID = 18.6 A
- Max rDS(on) = 6.0 mW at VGS = 4.5 V, ID = 14.9 A
- HBM ESD Protection Level of 6 kV Typical (Note 3)
- High Performance Trench Technology for Extremely Low rDS(on) and Fast Switching
- High Power and Current Handling Capability
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Applications
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