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FDS8858CZ Datasheet Dual-channel MOSFET

Manufacturer: onsemi

Overview: FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.

General Description

These dual N and P-Channel enhancement mode power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially „ Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel „ Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A „ Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A „ High power and handing capability in a widely used surface mount package „ Fast switching speed tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications „ Inverter „ Synchronous Buck SO-8 D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 D2 5 Q2 D2 6 D1 7 Q1 D1 8 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Pulsed TA = 25°C Single Pulse Avalanche Energy Power Dissipation for Dual Operation Power Dissipation for Single Operation TA = 25°C TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1c) Q1 Q2 30 -30 ±20 ±25 8.6 -7.3 20 -20 50 11 2.0 1.6 0.9 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 40 (Note 1a) 78 °C/W Device Marking FDS8858CZ Device FDS8858CZ Package SO-8 Reel Size 13” Tape Width 12mm Quantity 2500 units ©2011 Semiconductor Components Industries, LLC.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A General.

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