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FDS8858CZ - MOSFET

General Description

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A.
  • Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel.
  • Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A.
  • Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A.
  • High power and handing capability in a widely used surface mount package.
  • Fast switching speed General.

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Full PDF Text Transcription (Reference)

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FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ October 2011 Features Q1: N-Channel „ Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A „ Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel „ Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A „ Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A „ High power and handing capability in a widely used surface mount package „ Fast switching speed General Description These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.