Datasheet Summary
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
October 2011
Features
Q1: N-Channel
- Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
- Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A
Q2: P-Channel
- Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
- Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
- High power and handing capability in a widely used surface mount package
- Fast switching speed
General Description
These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize...
