Description
These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
- Q1: N-Channel.
- Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A.
- Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A
Q2: P-Channel.
- Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A.
- Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A.
- High power and handing capability in a widely used surface
mount package.
- Fast switching speed
General.
FDS8858CZ Datasheet
