Datasheet Summary
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Features
Q1: N-Channel
- Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
General Description
These dual N and P-Channel enhancement mode power
MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially
- Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel
- Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
- Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
- High power and handing capability in a widely used surface mount package
- Fast switching speed tailored to minimize on-state...
