Datasheet Details
| Part number | FDS8935 |
|---|---|
| Manufacturer | onsemi |
| File Size | 271.60 KB |
| Description | Dual P-Channel MOSFET |
| Datasheet | FDS8935-ONSemiconductor.pdf |
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Overview: FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.
| Part number | FDS8935 |
|---|---|
| Manufacturer | onsemi |
| File Size | 271.60 KB |
| Description | Dual P-Channel MOSFET |
| Datasheet | FDS8935-ONSemiconductor.pdf |
|
|
|
This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant Applications Load Switch Synchronous Rectifier D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 D2 55 D2 66 Q2 D1 77 Q1 D1 88 44 G2 33 S2 22 G1 11 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1b) Ratings -80 ±20 -2.1 -10 37 3.1 1.6 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 40 (Note 1a) 78 °C/W Device Marking FDS8935 Device FDS8935 Package SO-8 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2010 Semiconductor Components Industries, LLC.
1 October-2017, Rev.3 Publication Order Number: FDS8935/D FDS8935 Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 μA, VGS = 0 V -80 V ID = -250 μA, referenced to 25 °
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDS8935 | MOSFET | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
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