FDS8949 mosfet equivalent, dual n-channel mosfet.
* Max rDS(on) = 29mΩ at VGS = 10V
* Max rDS(on) = 36mΩ at VGS = 4.5V
* Low gate charge
* High performance trench technology for extremely low
rDS(on)
.
where low in-line power loss and fast switching are required.
Applications
* Inverter
* Power suppliers
D2 D2 D.
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