Datasheet Details
| Part number | FDS8949 |
|---|---|
| Manufacturer | onsemi |
| File Size | 401.14 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | FDS8949-ONSemiconductor.pdf |
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Overview: FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A,.
| Part number | FDS8949 |
|---|---|
| Manufacturer | onsemi |
| File Size | 401.14 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | FDS8949-ONSemiconductor.pdf |
|
|
|
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Applications Inverter Power suppliers D2 D2 D1 D1 SO-8 Pin 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation for Dual Operation Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) (Note 1b) RθJA Thermal Resistance-Single operation, Junction to Ambient RθJA Thermal Resistance-Single operation, Junction to Ambient RθJC Thermal Resistance, Junction to Case Package Marking and Ordering Information (Note 1a) (Note 1b) (Note 1) Device Marking FDS8949 Device FDS8949 Reel Size 13’’ Tape Width 12mm Ratings 40 ±20 6 20 26 2 1.6 0.9 -55 to 150 Units V V A mJ W °C 81 135 °C/W 40 Quantity 2500 units ©2006 Semiconductor Components industries, LLC.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDS8949 | Dual N-Channel MOSFET | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
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