FDS8949 Datasheet | onsemi

FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29mΩ Features - Max rDS(on) = 29mΩ at VGS = 10V - Max rDS(on) = 36mΩ at VGS = 4.5V - Low gate charge - High performance trench technology for extremely low rDS(on) - High power and current handling capability - RoHS pliant General Description These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss...