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FDS8949 Datasheet Dual N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: .. FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET October 2006 FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A,.

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications „ Inverter „ Power suppliers D2 D2 D1 D1 SO-8 Pin 1 S1 G1 G2 S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation for Dual Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 3) (Note 1a) Ratings 40 ±20 6 20 26 2 1.6 0.9 -55 to 150 °C W Units V V A mJ Thermal Characteristics RθJA RθJA RθJC Thermal Resistance-Single operation, Junction to Ambient Thermal Resistance-Single operation, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1b) (Note 1) 81 135 40 °C/W Package Marking and Ordering Information Device Marking FDS8949 Device FDS8949 Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDS8949 Rev.

Key Features

  • Max rDS(on) = 29mΩ at VGS = 10V.
  • Max rDS(on) = 36mΩ at VGS = 4.5V.
  • Low gate charge.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability.
  • RoHS compliant tm General.

Similar Datasheet

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