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FDS8949-F085 - Dual N-Channel MOSFET

General Description

superior switching performance.

Key Features

  • Max rDS(on) = 29mΩ at VGS = 10V.
  • Max rDS(on) = 36mΩ at VGS = 4.5V.
  • Low gate charge.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability.
  • Qualified to AEC Q101.
  • RoHS compliant General.

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FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29mΩ Features „ Max rDS(on) = 29mΩ at VGS = 10V „ Max rDS(on) = 36mΩ at VGS = 4.5V „ Low gate charge „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Qualified to AEC Q101 „ RoHS compliant General Description These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.