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FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET
FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET
40V, 6A, 29mΩ
Features
Max rDS(on) = 29mΩ at VGS = 10V Max rDS(on) = 36mΩ at VGS = 4.5V Low gate charge
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Qualified to AEC Q101 RoHS compliant
General Description
These N-Channel Logic Level MOSFETs are produced
using ON
Semiconductor’s advanced
PowerTrench® process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
FDS8949-F085 Datasheet
