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FDS8949-F085 Datasheet Dual N-channel MOSFET

Manufacturer: onsemi

Overview: FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A,.

General Description

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications „ Inverter „ Power suppliers D2 D2 D1 D1 SO-8 Pin 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous ID -Pulsed (Note 1a) EAS Drain-Source Avalanche Energy Power Dissipation for Dual Operation (Note 3) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance-Single operation, Junction to Ambient RθJA Thermal Resistance-Single operation, Junction to Ambient RθJC Thermal Resistance, Junction to Case Package Marking and Ordering Information (Note 1a) (Note 1b) (Note 1) Device Marking FDS8949 Device FDS8949-F085 Reel Size 13’’ Tape Width 12mm Ratings 40 ±20 6 20 26 2 1.6 0.9 -55 to 150 Units V V A mJ W °C 81 135 °C/W 40 Quantity 2500 units ©2010 Semiconductor ponents Industries, LLC.

Key Features

  • Max rDS(on) = 29mΩ at VGS = 10V.
  • Max rDS(on) = 36mΩ at VGS = 4.5V.
  • Low gate charge.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability.
  • Qualified to AEC Q101.
  • RoHS compliant General.

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FDS8949-F085 Distributor