FDS8949 Overview
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. 2 Publication Order Number:.
FDS8949 Key Features
- Max rDS(on) = 29mΩ at VGS = 10V
- Max rDS(on) = 36mΩ at VGS = 4.5V
- Low gate charge
- High performance trench technology for extremely low
- High power and current handling capability
- RoHS pliant
FDS8949 Applications
- Pulsed Drain-Source Avalanche Energy Power Dissipation for Dual Operation Power Dissipation for Single Operation
