FDS8984 mosfet equivalent, n-channel mosfet.
* Max RDS(ON) = 23 mW @ VGS = 10 V, ID = 7 A
* Max RDS(ON) = 30 mW @ VGS = 4.5 V, ID = 6 A
* Low Gate Charge
* 100% RG Tested
* This Device is Pb−Free.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of dc−dc converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 227.00KB)