FDS8984 Datasheet | Fairchild Semiconductor

FDS8984 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 30V, 7A, 23mΩ May 2007 tm General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. - Max r DS(on) = 23mΩ, VGS = 10V, ID = 7A - Max r DS(on) = 30mΩ, VGS = 4.5V, ID = 6A - Low gate charge - 100% RG tested - Ro HS pliant DD2DD2 DD1 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 5 6 Q2 7 8 Q1 4 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Parameter (Note 1a) EAS Single Pulse Avalache Energy Power Dissipation for Single Operation Derate above 25°C (Note 2) TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 7 30 32 1.6 13 -55 to...