FDS8984 - N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET has been designed specifically to improve the overall efficiency of dc

dc converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Key Features

Max RDS(ON) = 23 mW @ VGS = 10 V, ID = 7 A.
Max RDS(ON) = 30 mW @ VGS = 4.5 V, ID = 6 A.
Low Gate Charge.
100% RG Tested.
This Device is Pb.
Free and Halogen Free.

📥 Download Datasheet

FDS8984 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDS8984
Manufacturer	onsemi
File Size	227.00 KB
Description	N-Channel MOSFET
Datasheet	FDS8984 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FDS8984	N-Channel PowerTrench MOSFET	Fairchild Semiconductor
FDS8984_F085	N-Channel PowerTrench MOSFET	Fairchild Semiconductor
FDS89141	Dual N-Channel MOSFET	Fairchild Semiconductor
FDS89141	Dual N-Channel 100V MOSFET	VBsemi
FDS89161	Dual N-Channel MOSFET	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description
FDS8984-F085	N-Channel MOSFET
FDS8984-F40	N-Channel MOSFET
FDS8935	Dual P-Channel MOSFET
FDS8949	Dual N-Channel MOSFET
FDS8949-F085	Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOSFET – N-Channel, POWERTRENCH) 30 V, 7 A, 23 mW FDS8984, FDS8984-F40 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of dc−dc converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • Max RDS(ON) = 23 mW @ VGS = 10 V, ID = 7 A • Max RDS(ON) = 30 mW @ VGS = 4.