Datasheet Details
| Part number | FDS8984-F085 |
|---|---|
| Manufacturer | onsemi |
| File Size | 420.43 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDS8984-F085 Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Key Features
- Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A.
- Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A.
- Low gate charge.
- 100% RG tested.
- Qualified to AEC Q101.
- RoHS Compliant DD2DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S S 5 4 6 Q2 3 7 2 8 Q1 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Parameter (Note 1a) EAS Single Pulse Avalache En.