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FDS8984-F085 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Features

  • Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A.
  • Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A.
  • Low gate charge.
  • 100% RG tested.
  • Qualified to AEC Q101.
  • RoHS Compliant DD2DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S S 5 4 6 Q2 3 7 2 8 Q1 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Parameter (Note 1a) EAS Single Pulse Avalache En.

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Datasheet Details

Part number FDS8984-F085
Manufacturer ON Semiconductor
File Size 420.43 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8984-F085 Datasheet
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Full PDF Text Transcription

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FDS8984-F085 N-Channel PowerTrench® MOSFET FDS8984-F085 N-Channel PowerTrench® MOSFET 30V, 7A, 23mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features „ Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A „ Max rDS(on) = 30mΩ, VGS = 4.
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