Datasheet4U Logo Datasheet4U.com

FDS9431A - P-Channel MOSFET

Description

This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize onstate resistance and yet maintain superior switching performance.

DC/DC converte

Features

  • -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V.
  • Fast switching speed.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability. D D 5 D D 6 7 G SS 8 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (N.

📥 Download Datasheet

Datasheet Details

Part number FDS9431A
Manufacturer onsemi
File Size 177.25 KB
Description P-Channel MOSFET
Datasheet download datasheet FDS9431A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS9431A P-Channel 2.5V Specified MOSFET Fairchild Semiconductor
FDS9431A_F085 P-Channel 2.5V Specified MOSFET Fairchild Semiconductor
FDS9435A 30V P-Channel Power Trench MOSFET Fairchild Semiconductor
FDS9400A 30V P-Channel PowerTrench MOSFET Fairchild Semiconductor
FDS9400A P-Channel 30V MOSFET VBsemi

Other Datasheets by onsemi

Part Number Description
FDS9435A 30V P-Channel PowerTrench MOSFET
FDS9926A Dual N-Channel MOSFET
FDS2572 N-Channel MOSFET
FDS2582 N-Channel MOSFET
FDS2672 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
FDS9431A September 1999 FDS9431A P-Channel 2.5V Specified MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize onstate resistance and yet maintain superior switching performance. Applications • DC/DC converter • Power management • Load switch • Battery protection Features • -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V. • Fast switching speed. • High density cell design for extremely low RDS(ON). • High power and current handling capability.
Published: |