FDS9435A Description
5.3 A, 30 V RDS(ON) = 50 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 4.5 V This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has Low gate charge been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). Fast switching speed Applications Power management Load switch Battery protection High performance trench...
FDS9435A Key Features
- 5.3 A, -30 V
- Low gate charge