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FDS9435A Datasheet 30V P-Channel PowerTrench MOSFET

Manufacturer: onsemi

Overview: FDS9435A FDS9435A 30V P-Channel PowerTrench®® MOSFET.

General Description

• –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS = –10 V RDS(ON) = 80 mΩ @ VGS = –4.5 V This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process.

It has • Low gate charge been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

• Fast switching speed Applications • Power management • Load switch • Battery protection • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG (Note 1c) Operating and Storage Junction Temperature Range T

Key Features

  • General.

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