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FDS9435A Datasheet 30v P-channel Power Trench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect.

General Description

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • -5.3 A, -30 V, RDS(ON) = 0.045 Ω @ VGS = -10 V, RDS(ON) = 0.075 Ω @ VGS = - 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S F D 5A 3 94 pin 1 5 6 S G 4 3 2 1 7 8 SO-8 S S Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted FDS9435A Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain.

FDS9435A Distributor

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDS9435A 30V P-Channel PowerTrench MOSFET ON Semiconductor

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