Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
100 V, 5.6 A, 160 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been tailored to minimize the on- state resistance and maintain superior switching performance.
Features
- RDS(on) = 121 mW (Typ.) @ VGS = 10 V, ID = 2.8 A
- RDS(on) = 156 mW (Typ.) @ VGS = 5 V, ID = 1.8 A
- Low Gate Charge (Typ. 2.9 nC)
- Low Crss (Typ. 2.04 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Protection Level: HBM > 5.2 kV, MM > 400 V, CDM > 1.5 kV
- RoHS pliant
Applications
- Consumer Appliances
- LED TV and Monitor
- Synchronous Rectification
- Uninterruptible Power...
