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FDT457N - N-Channel MOSFET

Datasheet Summary

Description

These N

are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance, provide superior switching performance.

Features

  • 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V.
  • High Density Cell Design for Extremely Low RDS(ON).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • This Device is Pb.
  • Free.

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Datasheet preview – FDT457N

Datasheet Details

Part number FDT457N
Manufacturer ON Semiconductor
File Size 198.81 KB
Description N-Channel MOSFET
Datasheet download datasheet FDT457N Datasheet
Additional preview pages of the FDT457N datasheet.

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Full PDF Text Transcription

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Transistor, N-Channel, Field Effect, Enhancement Mode FDT457N General Description These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. Features • 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.
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