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FDV301N - N-Channel Digital FET

Description

This N

transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Features

  • 25 V, 0.22 A Continuous, 0.5 A Peak.
  • RDS(on) = 5 W @ VGS = 2.7 V.
  • RDS(on) = 4 W @ VGS = 4.5 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V.
  • Replace Multiple NPN Digital Transistors with One DMOS FET.
  • This Device is Pb.
  • Free and Halide Free Vcc D OUT IN G S GND Figure 1. Inverter.

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Datasheet Details

Part number FDV301N
Manufacturer onsemi
File Size 199.06 KB
Description N-Channel Digital FET
Datasheet download datasheet FDV301N Datasheet

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Full PDF Text Transcription

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Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. Features • 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.
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