FDV302P Datasheet P-channel Digital Fet

Manufacturer: onsemi

Overview: DATA SHEET www.onsemi.com Digital FET, P-Channel -25 V, -0.12 A, 10 W FDV302P.

Datasheet Details

This P−Channel logic level enhancement mode field effect transistor is produced using our proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance.

This device has been designed especially for low voltage applications as a replacement for digital transistors.

25 V,.
0.12 A Continuous,.
0.5 A Peak.
RDS(on) = 13 W @ VGS =.
2.7 V.
RDS(on) = 10 W @ VGS =.
4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
Gate.
Source Zener for ESD Ruggedness. > 6 kV Human Body Model.
Compact Industry Standard SOT.
23 Surface Mount Package.
Replace Many PNP Digital Transistors (DTCx and DCDx) with On.

Brand Logo	Part Number	Description	Manufacturer
	FDV302P	Digital FET/ P-Channel	Fairchild Semiconductor