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FDV304P - P-Channel Digital FET

Description

This P

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance at low gate drive conditions.

Features

  • 25 V,.
  • 0.46 A Continuous,.
  • 1.5 A Peak.
  • RDS(on) = 1.1 W @ VGS =.
  • 4.5 V.
  • RDS(on) = 1.5 W @ VGS =.
  • 2.7 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
  • Gate.
  • Source Zener for ESD Ruggedness. > 6 kV Human Body Model.
  • Compact Industry Standard SOT.
  • 23 Surface Mount Package.
  • This Device is Pb.
  • Free and Halide Free.

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Datasheet preview – FDV304P

Datasheet Details

Part number FDV304P
Manufacturer onsemi
File Size 176.80 KB
Description P-Channel Digital FET
Datasheet download datasheet FDV304P Datasheet
Additional preview pages of the FDV304P datasheet.

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Full PDF Text Transcription

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Digital FET, P-Channel FDV304P, FDV304P-F169 General Description This P−Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on−state resistance even at gate drive voltages as low as 2.5 V. Features • −25 V, −0.46 A Continuous, −1.5 A Peak ♦ RDS(on) = 1.1 W @ VGS = −4.5 V ♦ RDS(on) = 1.5 W @ VGS = −2.7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V • Gate−Source Zener for ESD Ruggedness.
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