FDV304P
Description
This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook puters and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Features
-25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6k V Human Body Model pact industry standard SOT-23 surface mount package.
SOT-23 Mark:304
Super SOTTM-6
Super SOTTM-8
SO-8
SOT-223
SOIC-16
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain...
