FDV304P Datasheet Digital Fet/ P-channel

Manufacturer: Fairchild (now onsemi)

Overview: August 1997 FDV304P Digital FET, P-Channel General.

Datasheet Details

Part number	FDV304P
Manufacturer	Fairchild (now onsemi)
File Size	63.92 KB
Description	Digital FET/ P-Channel
Datasheet	FDV304P_FairchildSemiconductor.pdf

This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance at low gate drive conditions.

This device is designed especially for application in battery power applications such as notebook puters and cellular phones.

-25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. SOT-23 Mark:304 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Vol.

Brand Logo	Part Number	Description	Other Manufacturers
	FDV304P	P-Channel Digital FET	ON Semiconductor
	FDV304P-F169	P-Channel Digital FET	ON Semiconductor