Datasheet Summary
MOSFET
- Dual, P-Channel (-1.5 V), Specified, POWERTRENCH)
- 20 V,
- 0.83 A, 0.5 W
General Description These P- Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.
This Dual P- Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the rDS(on) @ VGS =
- 1.5 V.
Features
- Max rDS(on) = 0.5 W at VGS =
- 4.5 V, ID =
- 0.83 A
- Max rDS(on)...
