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FDY1002PZ Datasheet Dual P-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – Dual, P-Channel (-1.5 V), Specified, POWERTRENCH) –20 V, –0.83 A, 0.

General Description

These P−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

This Dual P−Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the rDS(on) @ VGS = –1.5 V.

Key Features

  • Max rDS(on) = 0.5 W at VGS =.
  • 4.5 V, ID =.
  • 0.83 A.
  • Max rDS(on) = 0.7 W at VGS =.
  • 2.5 V, ID =.
  • 0.70 A.
  • Max rDS(on) = 1.2 W at VGS =.
  • 1.8 V, ID =.
  • 0.43 A.
  • Max rDS(on) = 1.8 W at VGS =.
  • 1.5 V, ID =.
  • 0.36 A.
  • HBM ESD Protection Level = 1400 V (Note 1).
  • This Device is Pb.
  • Free and is RoHS Compliant.

FDY1002PZ Distributor

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