FDY1002PZ - Dual P-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDY1002PZ
Manufacturer	ON Semiconductor
File Size	251.05 KB
Description	Dual P-Channel MOSFET
Datasheet	FDY1002PZ Datasheet
Additional preview pages of the FDY1002PZ datasheet.

Product details

Description

These P Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Channel MOSFET has been designed using onsemi’s advanced Power Trench process to

Features

Max rDS(on) = 0.5 W at VGS =.
4.5 V, ID =.
0.83 A.
Max rDS(on) = 0.7 W at VGS =.
2.5 V, ID =.
0.70 A.
Max rDS(on) = 1.2 W at VGS =.
1.8 V, ID =.
0.43 A.
Max rDS(on) = 1.8 W at VGS =.
1.5 V, ID =.
0.36 A.
HBM ESD Protection Level = 1400 V (Note 1).
This Device is Pb.
Free and is RoHS Compliant.

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Published: Feb 5, 2023 |