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FDY1002PZ - MOSFET

General Description

Max rDS(on) = 0.5 Ω at VGS = 4.5 V, ID = 0.83 A Max rDS(on) = 0.7 Ω at VGS = 2.5 V, ID = 0.70 A Max rDS(on) = 1.2 Ω at VGS = 1.8 V, ID = 0.43 A Max rDS(on) = 1.8 Ω at VGS = 1.5 V, ID =

0.

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FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET October 2008 –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A „ Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A „ Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A „ Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A „ HBM ESD protection level = 1400 V (Note 3) „ RoHS Compliant This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS = –1.5 V.