FDY1002PZ Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 0.5 Ω at VGS = - 4.5 V, ID = - 0.83 A - Max r DS(on) = 0.7 Ω at VGS = - 2.5 V, ID = - 0.70 A - Max r DS(on) = 1.2 Ω at VGS = - 1.8 V, ID = - 0.43 A - Max r DS(on) = 1.8 Ω at VGS = - 1.5 V, ID = - 0.36 A - HBM ESD protection level = 1400 V (Note 3) - Ro HS pliant This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the r DS(on)@VGS = - 1.5 V. Application - Li-Ion Battery Pack 6 5 4 2 3 SC89-6 S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction...