Description
These P
Channel Logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- Max rDS(on) = 0.5 W at VGS =.
- 4.5 V, ID =.
- 0.83 A.
- Max rDS(on) = 0.7 W at VGS =.
- 2.5 V, ID =.
- 0.70 A.
- Max rDS(on) = 1.2 W at VGS =.
- 1.8 V, ID =.
- 0.43 A.
- Max rDS(on) = 1.8 W at VGS =.
- 1.5 V, ID =.
- 0.36 A.
- HBM ESD Protection Level = 1400 V (Note 1).
- This Device is Pb.
- Free and is RoHS Compliant.
FDY1002PZ Datasheet
