FDY1002PZ Datasheet | onsemi

Description These P- Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. This Dual P- Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the r DS(on) @ VGS = - 1.5 V. Features - Max r DS(on) = 0.5 W at VGS = - 4.5 V, ID = - 0.83 A - Max r DS(on) = 0.7 W at VGS = - 2.5 V, ID = - 0.70 A - Max r DS(on) = 1.2 W at VGS = - 1.8 V, ID = - 0.43 A - Max r DS(on) = 1.8 W at VGS = - 1.5 V, ID = - 0.36 A - HBM ESD Protection Level = 1400 V (Note 1) - This Device is Pb- Free and is Ro HS pliant Application - Li- Ion Battery Pack NOTE: 1. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. DATA SHEET .onsemi. - 20 V r DS(on) MAX 0.5 W @ - 4.5 V 0.7 W @ - 2.5 V 1.2 W @ - 1.8 V 1.8 W @ - 1.5 V ID MAX - 0.83 A 6 5 4 1 23 SOT- 563 CASE 419BH MARKING DIAGRAM G&2 G = Device Code &2 = 2- Digit Date Code PIN ASSIGNMENT S1 1 6...