FDY1002PZ Overview
These P−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. This Dual P−Channel MOSFET has been...
FDY1002PZ Key Features
- Max rDS(on) = 0.5 W at VGS = -4.5 V, ID = -0.83 A
- Max rDS(on) = 0.7 W at VGS = -2.5 V, ID = -0.70 A
- Max rDS(on) = 1.2 W at VGS = -1.8 V, ID = -0.43 A
- Max rDS(on) = 1.8 W at VGS = -1.5 V, ID = -0.36 A
- HBM ESD Protection Level = 1400 V (Note 1)
- This Device is Pb-Free and is RoHS pliant
- Li-Ion Battery Pack
- Rev. 4
- Continuous (Note 2a)
- Pulsed
