FFPF15S60S
FFPF15S60S is Diode manufactured by onsemi.
Description
The FFPF15S60S is STEALTHt II rectifier with soft recovery characteristics. It is silicon nitride passivated ion- implanted epitaxial planar construction.
This device is intended for use as freewheeling of boost diode in switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Features
- Stealth Recovery Trr= 35 ns (@ IF= 15 A)
- Max Forward Voltage, VF= 2.6 V (@ TC = 25°C)
- 600 V Reverse Voltage and High Reliability
- Improved dv/dt Capability
- This Device is Pb- Free and is Ro HS pliant
Applications
- General Purpose
- Switching Mode Power Supply
- Boost Diode in Continuous Mode Power Factor Corrections
- Power Switching Circuits
ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VRRM VRWM VR IF(AV)
IFSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current @ TC = 52_C Non- repetitive Peak Surge Current 60 Hz Single Half- Sine Wave
TJ, TSTG
Operating and Storage Temperature Range
- 65 to +175 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET .onsemi.
1. Cathode 2. Anode
1. Cathode 2. Anode
TO- 220F- 2L CASE 221AS
MARKING DIAGRAM
$Y&Z&3&K F15S60S
$Y &Z&3 &K F15S60S
= onsemi Logo = Date Code (Year & Week) = Lot = Specific Device...
