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FFSD1065A Datasheet

Silicon Carbide Schottky Diode

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FFSD1065A
Silicon Carbide Schottky
Diode
650 V, 10 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
Max Junction Temperature 175 °C
Avalanche Rated 64 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
www.onsemi.com
1,3 Cathode 2. Anode
3
1
2
DPAK
(TO252)
MARKING DIAGRAM
$Y&Z&3&K
FFS
D1065A
$Y
&Z
&3
&K
FFSD1065A
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
September, 2019 Rev. 1
1
Publication Order Number:
FFSD1065A/D


  ON Semiconductor Electronic Components Datasheet  

FFSD1065A Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

FFSD1065A
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Rating
Parameter
FFSD1065A
Unit
VRRM
Peak Repetitive Reverse Voltage
650 V
EAS Single Pulse Avalanche Energy (Note 1)
64 mJ
IF Continuous Rectified Forward Current @ TC < 158°C
10 A
Continuous Rectified Forward Current @ TC < 135°C
18
IF,MAX
NonRepetitive Peak Forward Surge Current
TC = 25°C, 10 ms
760 A
TC = 150°C, 10 ms
740 A
IF,SM
NonRepetitive Forward Surge Current
HalfSine Pulse, tp = 8.3 ms
56
A
IF,RM
Repetitive Forward Surge Current
HalfSine Pulse, tp = 8.3 ms
34
A
Ptot Power Dissipation
TC = 25°C
150 W
TC = 150°C
25 W
TJ. TSTG
Operating and Storage Temperature Range
55 to + 175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max.
Value
1.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
OFF CHARACTERISTICS
VF Forward Voltage
IF = 10 A, TC = 25°C
IF = 10 A, TC = 125°C
IF = 10 A, TC = 175°C
IR Reverse Current
VR = 650 V, TC = 25°C
VR = 650 V, TC = 125°C
VR = 650 V, TC = 175°C
QC Total Capacitive Charge
V = 400 V
C Total Capacitance
VR = 1 V, f = 100 kHz
VR = 200 V, f = 100 kHz
VR = 400 V, f = 100 kHz
1. EAS of 64 mJ is based on starting TJ = 25°C; L = 0.5 mH, IAS = 16 A, V = 50 V.
ORDERING INFORMATION
Device
FFSD1065A
Marking
FFSD1065A
Package
DPAK
Min Typ Max Unit
1.50 1.75 V
1.6 2.0
1.72 2.4
− − 200 mA
− − 400
− − 600
34 nC
575
pF
62
47
Reel Size
13
Tape Width
N/A
Quantity
2500
www.onsemi.com
2


Part Number FFSD1065A
Description Silicon Carbide Schottky Diode
Maker ON Semiconductor
Total Page 6 Pages
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