Datasheet4U Logo Datasheet4U.com

FFSD10120A Datasheet Silicon Carbide Schottky Diode

Manufacturer: onsemi

Overview: FFSD10120A — Silicon Carbide Schottky Diode www.onsemi.com FFSD10120A Silicon Carbide Schottky Diode 1200 V, 10.

General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.

System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

Key Features

  • Max Junction Temperature 175 °C.
  • Avalanche Rated 100 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.

FFSD10120A Distributor & Price

Compare FFSD10120A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.