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FFSD10120A - Silicon Carbide Schottky Diode

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175 °C.
  • Avalanche Rated 100 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.

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Datasheet preview – FFSD10120A

Datasheet Details

Part number FFSD10120A
Manufacturer onsemi
File Size 845.18 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet FFSD10120A Datasheet
Additional preview pages of the FFSD10120A datasheet.

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Full PDF Text Transcription

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FFSD10120A — Silicon Carbide Schottky Diode www.onsemi.com FFSD10120A Silicon Carbide Schottky Diode 1200 V, 10 A Features • Max Junction Temperature 175 °C • Avalanche Rated 100 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
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