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FFSD1065B-F085 Datasheet

Silicon Carbide Schottky Diode

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FFSD1065B-F085
Silicon Carbide Schottky
Diode
650 V, 10 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 49 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Automotive HEV−EV Onboard Chargers
Automotive HEV−EV DC−DC Converters
www.onsemi.com
1., 3. Cathode 2. Anode
Schottky Diode
3
1
2
DPAK−3 (TO−252, 3 LD)
CASE 369AS
MARKING DIAGRAM
$Y&Z&3&K
FFSD
1065B
$Y
&Z
&3
&K
FFSD1065B
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
August, 2018 − Rev. 3
1
Publication Order Number:
FFSD1065B−F085/D


  ON Semiconductor Electronic Components Datasheet  

FFSD1065B-F085 Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

FFSD1065B−F085
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRRM
EAS
IF
IF, Max
IF,SM
Ptot
TJ, TSTG
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ TC < 150°C
Continuous Rectified Forward Current @ TC < 135°C
Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms
TC = 150°C, 10 ms
Non-Repetitive Forward Surge Current
TC = 25°C
Half-Sine Pulse, tp = 8.3 ms
Power Dissipation
TC = 25°C
TC = 150°C
Operating and Storage Temperature Range
TO−247 Mounting Torque, M3 Screw
650
49
10
13.5
650
570
45
98
16
−55 to +175
60
V
mJ
A
A
A
A
W
W
°C
Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 49 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max
Value
1.53
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Unit
VF Forward Voltage
IF = 10 A, TC = 25°C
− 1.38 1.7
V
IF = 10 A, TC = 125°C
− 1.6 2.0
IF = 10 A, TC = 175°C
− 1.72 2.4
IR Reverse Current
VR = 650 V, TC = 25°C
− 0.5 40 mA
VR = 650 V, TC = 125°C
1 80
VR = 650 V, TC = 175°C
2 160
QC
Total Capacitive Charge
V = 400 V
− 25 − nC
C Total Capacitance
VR = 1 V, f = 100 kHz
− 424 −
pF
VR = 300 V, f = 100 kHz
39
VR = 600 V, f = 100 kHz
35
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping*
FFSD1065B−F085
FFSD1065B
DPAK−3
(Pb-Free / Halogen Free)
2500 / Tape & Reel
* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
www.onsemi.com
2


Part Number FFSD1065B-F085
Description Silicon Carbide Schottky Diode
Maker ON Semiconductor
Total Page 8 Pages
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