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FGAF30S65AQ Datasheet, ON Semiconductor

FGAF30S65AQ igbt equivalent, igbt.

FGAF30S65AQ Avg. rating / M : 1.0 rating-11

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FGAF30S65AQ Datasheet

Features and benefits


* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volt.

Application

and welder where low conduction and switching losses are essential. Features
* Maximum Junction Temperature: TJ = 1.

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