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  ON Semiconductor Electronic Components Datasheet  

FGAF30S65AQ Datasheet

IGBT

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Field Stop Trench IGBT,
30 A, 650 V
FGAF30S65AQ
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 4th generation of RC IGBTs offer the optimum
performance for PFC applications and welder where low conduction
and switching losses are essential.
Features
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Coefficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.) @ IC = 30 A
100% of the Parts Tested for ILM (Note 1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
IGBT with Monolithic Reverse Conducting Diode
This Device is PbFree and is RoHS Compliant
Typical Applications
PFC, Welder
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
VCES 650 V
VGES ±20 V
±30
Collector Current
@TC = 25°C
@TC = 100°C
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note 2)
Diode Forward Current @TC = 25°C
@ TC = 100°C
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation@TC = 25°C
@ TC = 100°C
Operating Junction / Storage Temperature
Range
IC
ILM
ICM
IF
IFM
PD
TJ, TSTG
60
30
90
90
30
15
90
83
42
55 to
+175
A
A
A
A
A
W
°C
Maximum Lead Temp. for Soldering Pur-
poses, 1/8from case for 5 seconds
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 13 W, Inductive Load, 100% Tested
2. Repetitive rating: pulse width limited by max. Junction temperature
www.onsemi.com
30 A, 650 V
VCE(sat) = 1.4 V (Typ.)
C
G
E
TO3PF
CASE 340AH
MARKING DIAGRAM
&Y
FGAF30S65
AQ&E&3&K
G CE
&Y = ON Semiconductor Logo
&E = Designate space on marking
&3 = 3Digit Data Code
&K = 2Digit Lot Traceability Code
FGAF30S65AQ = Specific Device Code
ORDERING INFORMATION
Device
FGAF30S65AQ
Package
TO3PF3L
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2019
September, 2019 Rev. 1
1
Publication Order Number:
FGAF30S65AQ/D


  ON Semiconductor Electronic Components Datasheet  

FGAF30S65AQ Datasheet

IGBT

No Preview Available !

FGAF30S65AQ
Table 1. THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, JunctiontoCase, for IGBT
Thermal Resistance, JunctiontoCase, for Diode
Thermal Resistance, JunctiontoAmbient
Symbol
RqJC
RqJC
RqJA
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
OFF CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 1 mA
BVCES
Temperature Coefficient of Breakdown
Voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
VGE = 0 V, IC = 1 mA
VGE = 0 V, VCE = 650 V
DBVCES /
DTJ
ICES
Gate leakage current, collectoremitter
shortcircuited
VGE = 20 V, VCE = 0 V
IGES
ON CHARACTERISTIC
Gateemitter threshold voltage
Collectoremitter saturation voltage
DYNAMIC CHARACTERISTIC
VGE = VCE, IC = 30 mA
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 175°C
VGE(th)
VCE(sat)
Input capacitance
Output capacitance
VCE = 30 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 400 V, IC = 30 A, VGE = 15 V
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Cies
Coes
Cres
Qg
Qge
Qgc
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
Total switching loss
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
Total switching loss
TJ = 25°C
VCC = 400 V, IC = 7.5 A
Rg = 13 W
VGE = 15 V
Inductive Load
TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 13 W
VGE = 15 V
Inductive Load
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Value
1.8
2.3
40
Min Typ
650
0.5
−−
−−
2.6 5.3
1.4
1.7
1959
29
8
58
13
17
17.6
6
97
44
295
82
377
18
11
92
24
515
140
655
Unit
_C/W
_C/W
_C/W
Max Unit
250
±400
V
V/°C
mA
nA
6.6 V
2.1 V
pF
nC
ns
mJ
ns
mJ
www.onsemi.com
2


Part Number FGAF30S65AQ
Description IGBT
Maker ON Semiconductor
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