FGAF30S65AQ - IGBT

Datasheet Summary

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ. ) @ IC = 30 A.
100% of the Parts Tested for ILM (Note 1).
High Input Impedance.
Fast Switching.
Tighten Parameter Distribution.
IGBT with Monolithic Reverse Conducting Diode.
This Device is Pb.
Free and is RoHS Complia.

ON Semiconductor

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Datasheet Details

Part number	FGAF30S65AQ
Manufacturer	ON Semiconductor
File Size	296.86 KB
Description	IGBT
Datasheet	FGAF30S65AQ Datasheet
Additional preview pages of the FGAF30S65AQ datasheet.

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Full PDF Text Transcription

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Field Stop Trench IGBT, 30 A, 650 V FGAF30S65AQ Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.

Published: Apr 1, 2020 |