• Part: FGAF30S65AQ
  • Description: IGBT
  • Manufacturer: onsemi
  • Size: 296.86 KB
FGAF30S65AQ Datasheet (PDF) Download
onsemi
FGAF30S65AQ

Key Features

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.) @ IC = 30 A
  • 100% of the Parts Tested for ILM (Note
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • This Device is Pb-Free and is RoHS pliant