FGH40N65UFDTU - IGBT

onsemi

General Description

stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.

Key Features

High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A.
High Input Impedance.
Fast Switching.
Qualified to Automotive Requirements of AEC.
Q101 (FGH40N65UFDTU.
F085).
These Devices are Pb.
Free and are RoHS Compliant.

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FGH40N65UFDTU igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	FGH40N65UFDTU
Manufacturer	onsemi
File Size	471.04 KB
Description	IGBT
Datasheet	FGH40N65UFDTU Datasheet

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Other Datasheets by onsemi

Part Number	Description
FGH40N65UFDTU-F085	IGBT
FGH40N60SF	IGBT
FGH40N60SFD	IGBT
FGH40N60SFDTU	IGBT
FGH40N60SFDTU-F085	IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • Qualified to Automotive Requirements of AEC−Q101 (FGH40N65UFDTU−F085) • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS www.onsemi.