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  ON Semiconductor Electronic Components Datasheet  

FGH40N65UFDTU Datasheet

IGBT

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IGBT - Field Stop
650 V, 40 A
FGH40N65UFDTU,
FGH40N65UFDTU-F085
Description
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for Automotive Chargers,
Inverter, and other applications where low conduction and switching
losses are essential.
Features
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
High Input Impedance
Fast Switching
Qualified to Automotive Requirements of AECQ101
(FGH40N65UFDTUF085)
These Devices are PbFree and are RoHS Compliant
Applications
Automotive Chargers, Converters, High Voltage Auxiliaries
Inverters, PFC, UPS
www.onsemi.com
VCES
650 V
IC
40 A
C
G
E
E
C
G
COLLECTOR
(FLANGE)
TO2473LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH40N65
UFD
$Y&Z&3&K
FGH40N65
UFDTU
© Semiconductor Components Industries, LLC, 2015
January, 2020 Rev. 3
Industrial
Automotive
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH40N65UFD /
FGH40N65UFDTU = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1 Publication Order Number:
FGH40N65UFDF085/D


  ON Semiconductor Electronic Components Datasheet  

FGH40N65UFDTU Datasheet

IGBT

No Preview Available !

FGH40N65UFDTU, FGH40N65UFDTUF085
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
650 V
VGES
Gate to Emitter Voltage
±20 V
IC Collector Current
TC = 25°C
80 A
TC = 100°C
40 A
ICM (Note 1) Pulsed Collector Current
TC = 25°C
120 A
PD Maximum Power Dissipation
TC = 25°C
290 W
TC = 100°C
116 W
TJ Operating Junction Temperature
55 to +150
°C
TSTG
Storage Temperature Range
55 to +150
°C
TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC (IGBT)
RqJC (Diode)
RqJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
0.43
1.45
40
Unit
_C/W
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
FGH40N65UFDTU
FGH40N65UFD
FGH40N65UFDTUF085*
FGH40N65UFDTU
*Qualified to Automotive Requirements of AECQ101.
Package
TO247
TO247
Packing Method
Tube
Tube
Qty per Tube
30
30
www.onsemi.com
2


Part Number FGH40N65UFDTU
Description IGBT
Maker ON Semiconductor
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