FGH40T65UQDF Datasheet - ON Semiconductor

IGBT

FGH40T65UQDF Features

* Max Junction Temperature 175°C

* Positive Temperature Co

* efficient for Easy Parallel Operating

* High Current Capability

* Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A

* 100% of the Parts Tested for ILM

* High Input Impedance

FGH40T65UQDF General Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. Featu.

FGH40T65UQDF Datasheet (759.75 KB)