FGH40T65UQDF
FGH40T65UQDF is IGBT manufactured by onsemi.
Description
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.
Features
- Max Junction Temperature 175°C
- Positive Temperature Co- efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A
- 100% of the Parts Tested for ILM
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- This Device is Pb- Free and is Ro HS pliant
Applications
- Induction Heating, MWO
.onsemi.
VCES 650 V
IC 40 A
COLLECTOR (FLANGE)
TO- 247- 3LD CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K FGH40T65 UQDF
© Semiconductor ponents Industries, LLC, 2016
November, 2019
- Rev. 3
$Y &Z &3 &K FGH40T65UQDF
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number:
FGH40T65UQDF/D
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Unit
VCES VGES
Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter...
