FGH4L50T65MQDC50 - N-Channel IGBT

onsemi

Datasheet Details

Part number	FGH4L50T65MQDC50
Manufacturer	onsemi
File Size	215.14 KB
Description	N-Channel IGBT
Datasheet	FGH4L50T65MQDC50 Datasheet

Overview

IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 50 A FGH4L50T65MQDC50 Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology in TO−247 4−lead package, FGH4L50T65MQDC50 offers the optimum performance with both low conduction and switching losses for high−efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter.

Key Features

Positive Temperature Coefficient for Easy Parallel Operation.
High Current Capability.
100% of the Parts are Tested for ILM (Note 2).
Smooth and Optimized Switching.
Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ. ) @ IC = 50 A.
No Reserved Recovery / No Forward Recovery.
Tight Parameter Distribution.
RoHS Compliant.

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