FGH4L40T120LQD
FGH4L40T120LQD is IGBT manufactured by onsemi.
IGBT
- Ultra Field Stop
1200 V, 40 A, VCE(Sat) = 1.55V, TO247 4L
This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost- effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on- state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co- packaged free- wheeling diode with a low forward voltage.
Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature: TJ = 175°C
- Fast and Soft Reverse Recovery Diode
- Optimized for Low VCE(Sat)
Typical Applications
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