FGH60T65SQD-F155 Datasheet IGBT

Manufacturer: onsemi

FGH60T65SQD-F155 igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	FGH60T65SQD-F155
Manufacturer	onsemi
File Size	555.34 KB
Description	IGBT
Download	FGH60T65SQD-F155 Download (PDF)

General Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Overview

IGBT - Field Stop, Trench 650 V, 60 A FGH60T65SQD-F155.

Key Features

Max Junction Temperature 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 60 A.
100% of the Parts Tested for ILM(1).
High Input Impedance.
Fast Switching.
Tighten Parameter Distribution.
This Device is Pb.
Free and is RoHS Compliant.

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