FGH60T65SQD-F155 datasheet, igbt equivalent, ON Semiconductor

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Features and benefits

* Max Junction Temperature 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(s.

Application

where low conduction and switching losses are essential. Features
* Max Junction Temperature 175°C
* Positive Te.

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are es.

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