FGH80N60FD2 igbt equivalent, igbt.
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 40 A
* High Input Impedance
* Fast Switching
* This Device is Pb−Fr.
where low conduction and switching losses are essential.
Features
* High Current Capability
* Low Saturation Vol.
Image gallery
Download