900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

FGH80N60FD2 Datasheet

IGBT

No Preview Available !

IGBT - Field Stop
600 V, 40 A
FGH80N60FD2
Description
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for induction heating and
PFC applications where low conduction and switching losses are
essential.
Features
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 40 A
High Input Impedance
Fast Switching
This Device is PbFree and is RoHS Compliant
Applications
Induction Heating, PFC
www.onsemi.com
VCES
600 V
IC
40 A
C
G
E
E
C
G
COLLECTOR
(FLANGE)
TO2473LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH80N60
FD2
© Semiconductor Components Industries, LLC, 2008
February, 2020 Rev. 3
$Y
&Z
&3
&K
FGH80N60FD2
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1 Publication Order Number:
FGH80N60FD2/D


  ON Semiconductor Electronic Components Datasheet  

FGH80N60FD2 Datasheet

IGBT

No Preview Available !

FGH80N60FD2
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
600 V
VGES
GateEmitter Voltage
±20 V
IC Collector Current
TC = 25°C
80 A
TC = 100°C
40 A
ICM (Note 1) Pulsed Collector Current
TC = 25°C
160 A
PD Maximum Power Dissipation
TC = 25°C
290 W
TC = 100°C
116 W
TJ Operating Junction Temperature
55 to +150
°C
TSTG
Storage Temperature Range
55 to +150
°C
TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC (IGBT)
RqJA (Diode)
RqJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.43
1.45
40
Unit
_C/W
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FGH80N60FD2TU
Top Mark
FGH80N60FD2
Package
TO247
Packing
Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
OFF CHARACTERISTICS
BVCES
CollectorEmitter Breakdown Voltage
DBVCES / DTJ Temperature Coefficient of Breakdown Voltage
VGE = 0 V, IC = 250 mA
VGE = 0 V, IC = 250 mA
ICES
Collector CutOff Current
IGES
GE Leakage Current
ON CHARACTERISTICS
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
VGE(th)
VCE(sat)
GE Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 250 mA, VCE = VGE
IC = 40 A, VGE = 15 V,
IC = 40 A, VGE = 15 V,
TC = 125°C
DYNAMIC CHARACTERISTICS
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Min. Typ. Max. Unit
600 − − V
0.6 V/°C
− − 250 mA
±400
nA
4.5 5.5 7.0
1.8 2.4
2.05
V
V
V
2110
200
60
pF
pF
pF
www.onsemi.com
2


Part Number FGH80N60FD2
Description IGBT
Maker ON Semiconductor
PDF Download

FGH80N60FD2 Datasheet PDF






Similar Datasheet

1 FGH80N60FD 80A Field Stop IGBT
Fairchild Semiconductor
2 FGH80N60FD IGBT
ON Semiconductor
3 FGH80N60FD2 80A Field Stop IGBT
Fairchild Semiconductor
4 FGH80N60FD2 IGBT
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy