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FGHL75T65LQDT - IGBT

FGHL75T65LQDT Description

IGBT - Field Stop, Trench 75 A, 650 V FGHL75T65LQDT .
Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology. Maximum Junction Temperature:.

FGHL75T65LQDT Features

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ. ) @ IC = 75 A
* 100% Of The Part Are Tested For ILM (Note 2)

FGHL75T65LQDT Applications

* Solar Inverter
* UPS, ESS
* PFC, Converters MAXIMUM RATINGS Parameter Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current @ TC = 25°C (Note 1) Collector Current @ TC = 100°C Pulsed Collector Current (Note 2) Pulsed Coll

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