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FGHL40S65UQ - IGBT

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.36 V (Typ. ) @IC = 40 A.
  • 100% of the Parts tested for ILM (Note 1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • RoHS Compliant.
  • IGBT with Monolithic Reverse Conducting Diode Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGHL40S65UQ Product Preview Field Stop Trench IGBT 40 A, 650 V Using the novel field stop generation IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and microwave oven. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.36 V (Typ.