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FGY75T95SQDT Datasheet

Manufacturer: onsemi
FGY75T95SQDT datasheet preview

FGY75T95SQDT Details

Part number FGY75T95SQDT
Datasheet FGY75T95SQDT-ONSemiconductor.pdf
File Size 591.21 KB
Manufacturer onsemi
Description IGBT
FGY75T95SQDT page 2 FGY75T95SQDT page 3

FGY75T95SQDT Overview

IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95SQDT Trench Field Stop 4th generation High Speed IGBT co−packaged with full current rated diode.

FGY75T95SQDT Key Features

  • Maximum Junction Temperature : TJ = 175℃
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(Sat) = 1.69 V (Typ.) @ IC = 75 A
  • Fast Switching
  • Tighten Parameter Distribution
  • These Devices are Pb-Free and are RoHS pliant

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