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FGY75T95SQDT - IGBT

Key Features

  • Maximum Junction Temperature : TJ = 175℃.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.69 V (Typ. ) @ IC = 75 A.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95SQDT Trench Field Stop 4th generation High Speed IGBT co−packaged with full current rated diode. Features • Maximum Junction Temperature : TJ = 175℃ • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.69 V (Typ.