FGY75T95LQDT Description
IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95LQDT Trench Field Stop 4th generation Low Vcesat IGBT co−packaged with full current rated diode.
FGY75T95LQDT Key Features
- Maximum Junction Temperature : TJ = 175℃
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A
- Fast Switching
- Tighten Parameter Distribution
- These Devices are Pb-Free and are RoHS pliant