FGY75T95LQDT
FGY75T95LQDT is IGBT manufactured by onsemi.
IGBT
- Field Stop, Trench
75 A, 950 V
Product Preview FGY75T95LQDT
Trench Field Stop 4th generation Low Vcesat IGBT co- packaged with full current rated diode.
Features
- Maximum Junction Temperature : TJ = 175℃
- Positive Temperature Co- efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A
- Fast Switching
- Tighten Parameter Distribution
- These Devices are Pb- Free and are Ro HS pliant
Applications
- Solar Inverter
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector to Emitter Voltage
Gate to Emitter Voltage Transient Gate to Emitter Voltage
VCES VGES
±20
±30
Collector Current
@TC = 25°C
@TC = 100°C
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note...
