FGY75T120SQDN
FGY75T120SQDN is IGBT manufactured by onsemi.
Ultra Field Stop IGBT, 1200 V, 75 A
General Description This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature: TJ = 175°C
- Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 75 A
- 100% of the Parts Tested for ILM(1)
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- Ro HS pliant
Applications
- Solar Inverter,...
