• Part: FGY75T95SQDT
  • Manufacturer: onsemi
  • Size: 591.21 KB
Download FGY75T95SQDT Datasheet PDF
FGY75T95SQDT page 2
Page 2
FGY75T95SQDT page 3
Page 3

FGY75T95SQDT Description

IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95SQDT Trench Field Stop 4th generation High Speed IGBT co−packaged with full current rated diode.

FGY75T95SQDT Key Features

  • Maximum Junction Temperature : TJ = 175℃
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(Sat) = 1.69 V (Typ.) @ IC = 75 A
  • Fast Switching
  • Tighten Parameter Distribution
  • These Devices are Pb-Free and are RoHS pliant