FGY75T95SQDT - IGBT

Datasheet Summary

Features

Maximum Junction Temperature : TJ = 175℃.
Positive Temperature Co.
efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(Sat) = 1.69 V (Typ. ) @ IC = 75 A.
Fast Switching.
Tighten Parameter Distribution.
These Devices are Pb.
Free and are RoHS Compliant.

ON Semiconductor

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Datasheet Details

Part number	FGY75T95SQDT
Manufacturer	ON Semiconductor
File Size	591.21 KB
Description	IGBT
Datasheet	FGY75T95SQDT Datasheet
Additional preview pages of the FGY75T95SQDT datasheet.

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Full PDF Text Transcription

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IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95SQDT Trench Field Stop 4th generation High Speed IGBT co−packaged with full current rated diode. Features • Maximum Junction Temperature : TJ = 175℃ • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.69 V (Typ.

Published: Oct 3, 2022 |