FGY100T120RWD - Power IGBT

Datasheet Summary

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3 lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, da

Features

Low Conduction Loss and Optimized Switching.
Maximum Junction Temperature.
TJ = 175°C.
Positive Temperature Coefficient for Easy Parallel Operation.
High Current Capability.
100% of the Parts are Dynamically Tested.
Short Circuit Rated.
RoHS Compliant.

ON Semiconductor

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Datasheet Details

Part number	FGY100T120RWD
Manufacturer	ON Semiconductor
File Size	279.60 KB
Description	Power IGBT
Datasheet	FGY100T120RWD Datasheet
Additional preview pages of the FGY100T120RWD datasheet.

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Full PDF Text Transcription

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IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L, 1200 V, 1.4 V, 100 A FGY100T120RWD Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high−power switch.

Published: Feb 5, 2023 |