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FGY100T120RWD - Power IGBT

General Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3 lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, da

Key Features

  • Low Conduction Loss and Optimized Switching.
  • Maximum Junction Temperature.
  • TJ = 175°C.
  • Positive Temperature Coefficient for Easy Parallel Operation.
  • High Current Capability.
  • 100% of the Parts are Dynamically Tested.
  • Short Circuit Rated.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L, 1200 V, 1.4 V, 100 A FGY100T120RWD Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high−power switch.