• Part: FGY100T120RWD
  • Manufacturer: onsemi
  • Size: 279.60 KB
Download FGY100T120RWD Datasheet PDF
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FGY100T120RWD Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high−power switch.

FGY100T120RWD Key Features

  • Low Conduction Loss and Optimized Switching
  • Maximum Junction Temperature
  • TJ = 175°C
  • Positive Temperature Coefficient for Easy Parallel Operation
  • High Current Capability
  • 100% of the Parts are Dynamically Tested
  • Short Circuit Rated
  • RoHS pliant