FGY100T120SWD - IGBT

Datasheet Summary

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3 lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high

and ESS.

Features

Maximum Junction Temperature TJ = 175°C.
Positive Temperature Coefficient for Easy Parallel Operation.
High Current Capability.
Smooth and Optimized Switching.
Low Switching Loss.
RoHS Compliant.

ON Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	FGY100T120SWD
Manufacturer	ON Semiconductor
File Size	280.93 KB
Description	IGBT
Datasheet	FGY100T120SWD Datasheet
Additional preview pages of the FGY100T120SWD datasheet.

📁 Similar Datasheet

FGY40T120SMD - Field Stop Trench IGBT (Fairchild Semiconductor)
FGY75N60SMD - IGBT (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FGY100T120RWD - Power IGBT
FGY100T65SCDT - IGBT
FGY120T65SPD-F085 - IGBT
FGY140T120SWD - N-Channel IGBT
FGY160T65SPD-F085 - IGBT
FGY4L160T120SWD - N-Channel IGBT
FGY60T120SQDN - IGBT
FGY75N60SMD - IGBT

Full PDF Text Transcription

Click to expand full text

IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3L 1200 V, 1.7 V, 100 A FGY100T120SWD Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS, and ESS.

Published: Sep 2, 2023 |